| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a defect in which current consumption is excessively increased when a high power supply voltage is applied at high temperature during burn-in time, and to provide a method for manufacturing the same.SOLUTION: The semiconductor device includes a differential circuit and a power supply circuit for supplying power to the differential circuit. The power supply circuit controls current supplied to the differential circuit on the basis of logics of a burn-in mode signal and an activation control signal of the differential circuit. |
