| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor wafer capable of decreasing a dislocation density by a simple process, and a method of manufacturing the nitride semiconductor wafer.SOLUTION: A nitride semiconductor wafer includes a Si substrate 1, two or more dots 2 formed on the Si substrate 1, an AlN layer 3 formed on the Si substrate 1 so that a pit 3a is formed on the upper side of each of the two or more dots 2, and a GaN-based semiconductor layer 4 formed on the AlN layer 3 to fill all or part in the pit 3a formed on the AlN layer 3. |
