| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a deposited film in which a device for forming the deposited film is prevented from being damaged and a by-product is prevented from adhering, while the utilization efficiency of a cleaning gas is improved.SOLUTION: In a method for forming a deposited film: a substrate 1106 is installed in a reaction vessel 1100 capable of decompression; plasma is generated while a source gas is supplied; a cleaning gas diluted by an inert gas is supplied into an exhaust pipe 1203 connecting the reaction vessel with an exhaust means 1200 for exhausting the inside of the reaction vessel, in parallel with formation of the deposited film on the substrate; and thereby a by-product is prevented from adhering in the exhaust pipe. The method includes a first step and a second step different from at least source gas supplies. Among the first step and the second step, when it is assumed that the step where the source gas supply is less is an A step and the step where the supply is more is a B step, a cleaning gas supply in the B step is more than that in the A step and a ratio of the cleaning gas to the total flow rate of the cleaning gas and the inert gas in the B step is less than that in the A step. |
