| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method which never contaminates the inside of a dry etching chamber.SOLUTION: A wafer processing method comprises the steps of: covering a surface of a wafer 11 by an adhesive 27 which cures when an external stimulus is applied thereto; putting the adhesive 27 into a semi-cured state by applying an external stimulus to the adhesive 27; cutting the wafer 11 along an outer peripheral edge of the wafer 11 from the adhesive side with a cutting blade and removing a chamfering part up to at least a depth from a surface of the wafer 11 to a finishing thickness together with the adhesive by cutting; sticking a support substrate onto the adhesive of the wafer 11 and sticking the wafer 11 and the support substrate by completely curing the adhesive 11 by applying an external stimulus thereto; holding the support substrate side of the stuck wafer on a chuck table and thinning the wafer 11 to a prescribed thickness by grinding a rear surface of the wafer; and dry-etching the rear surface of the wafer 11. |
