PHOTOELECTROCHEMICAL DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a photoelectrochemical device and a manufacturing method for a semiconductor device, which can precisely control a threshold of a nitride semiconductor by using photoelectrochemical reaction.SOLUTION: The manufacturing method includes: an oxidation step in which, while controlling a power supply 8 connected between a counter cathode 7 and an acting anode 5, light 4 having energy higher than a bandgap in a GaN layer of a sample 3 is irradiated upon the sample 3 to generate a pair of electrons and holes and the holes having moved to the surface of the sample 3 are subjected to oxidation reaction in the interface between the surface of the sample 3 and an oxidizing solution 2 to oxidize an AlGaN layer on the surface of the sample 3 to turn it into a thin film; and a threshold monitor step in which, by sweeping voltage of the power supply 8, measurement is taken of a threshold level Vth at which electrons are present in the GaN layer causing current to stop flowing any more. The oxidation step is carried out until the threshold level Vth measured in the threshold monitor step reaches a target threshold.