| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving electromigration resistance of Cu-based wiring formed by etching.SOLUTION: A wiring 15 composed of a Cu-based material has a cross-sectional shape in which a top width is narrower than a bottom width. A barrier film composed of a MnSiO film or a CuSiN film is formed on a side face of the wiring. The wiring and the barrier film are coated with a silicon nitride film 18. |
| 申请公布号 |
JP2013149679(A) |
申请公布日期 |
2013.08.01 |
| 申请号 |
JP20120007318 |
申请日期 |
2012.01.17 |
| 申请人 |
TOSHIBA CORP |
发明人 |
MIKI HIROKO;WADA MAKOTO;SHIBATA HIDEKI;KOJIMA AKIHIRO |
| 分类号 |
H01L23/532;H01L21/316;H01L21/318;H01L21/3205;H01L21/3213;H01L21/768;H01L21/8242;H01L27/108 |
主分类号 |
H01L23/532 |
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