| 发明名称 |
SILICON CARBON FILM STRUCTURE AND METHOD |
| 摘要 |
An improved silicon carbon film structure is disclosed. The film structure comprises multiple layers of silicon carbon and silicon. The multiple layers form stress film structures that have increased substitutional carbon content, and serve to induce stresses that improve carrier mobility for certain types of field effect transistors.
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| 申请公布号 |
US2013193492(A1) |
申请公布日期 |
2013.08.01 |
| 申请号 |
US201213360823 |
申请日期 |
2012.01.30 |
| 申请人 |
ADAM THOMAS N.;CHENG KANGGUO;HE HONG;KHAKIFIROOZ ALI;LI JINGHONG;REZNICEK ALEXANDER;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADAM THOMAS N.;CHENG KANGGUO;HE HONG;KHAKIFIROOZ ALI;LI JINGHONG;REZNICEK ALEXANDER |
| 分类号 |
H01L29/78;H01L21/20 |
主分类号 |
H01L29/78 |
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