发明名称 |
SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES |
摘要 |
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
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申请公布号 |
US2013196502(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201213708863 |
申请日期 |
2012.12.07 |
申请人 |
ASM INTERNATIONAL. N.V.;ASM INTERNATIONAL. N.V. |
发明人 |
HAUKKA SUVI P.;NISKANEN ANTTI |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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