发明名称 SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
摘要 Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
申请公布号 US2013196502(A1) 申请公布日期 2013.08.01
申请号 US201213708863 申请日期 2012.12.07
申请人 ASM INTERNATIONAL. N.V.;ASM INTERNATIONAL. N.V. 发明人 HAUKKA SUVI P.;NISKANEN ANTTI
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
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