| 摘要 |
PURPOSE: A semiconductor device and a power supply device are provided to prevent the breakage of a GaN-HEMT by reducing parasitic inductance between the source electrode of the GaN-HEMT and the drain electrode of a MOS-FET. CONSTITUTION: A lead frame consists of a lead and a die stage (15). A GaN-HEMT (31) is formed on the die stage. The source electrode of a GaN-HEMT is connected to the die stage. The MOS-FET (21) is formed on the die stage. The drain electrode of a MOS-FET is connected to the die stage. |
