| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which obtains a high adhesion force between a resin mold layer and a wiring layer/post electrode without generating voids in a resin mold layer and is excellent in the reliability, and to provide the semiconductor device obtained by the manufacturing method of the semiconductor device.SOLUTION: A resist pattern is formed on a wiring layer 4 and an interlayer dielectric film 3 exposed from the wiring layer 4, and a metal material is laminated on the wiring layer 4 using the resist pattern as a mask to form post electrodes 5. Then, a first resin coating part 61 is formed so as to cover each connection part C between the wiring layer 4 and the post electrode 5. A resin mold layer 7 is formed so as to seal a side part of each post electrode 5, the first resin coating parts 61, the wiring layer 4, and the interlayer dielectric film 3 exposed from the wiring layer 4 with a resin material while a top part 5a of each post electrode 5 is exposed. |
