| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device capable of performing plasma cleaning which can sufficiently remove deposits in a plasma processing chamber.SOLUTION: A plasma processing device comprises: a plasma processing chamber for plasma-processing a sample; an induction antenna provided outside the plasma processing chamber; and a high-frequency power source for supplying high-frequency power to the induction antenna. The plasma processing device further includes means for controlling capacitance. This means includes a Faraday shield which couples the plasma and capacitance and a dielectric window which airtightly seals an upper part of the plasma processing chamber and transmits an induction magnetic field generated from the induction antenna into the plasma processing chamber. The means controls capacitance in a central part between the Faraday shield and the dielectric window and capacitance in an outer periphery between the Faraday shield and the dielectric window. |
