发明名称 PHOTOVOLTAIC DEVICE, METHOD FOR MANUFACTURING SAME, AND PHOTOVOLTAIC MODULE
摘要 <p>A photovoltaic device is formed by stacking an intrinsic oxygen-containing amorphous silicon layer, an impurity-doped conductive amorphous silicon layer, and a transparent conductive layer in this order directly on a single-crystal silicon substrate of one conductivity type. Crystal particles, the area of which in the surface direction of the single-crystal silicon substrate increases beginning at the surface of the single-crystal silicon substrate and reaching the transparent conductive layer, are scattered inside the intrinsic oxygen-containing amorphous silicon layer and the conductive amorphous silicon layer. This can obtain a photovoltaic device excellent in a photoelectric conversion efficiency.</p>
申请公布号 WO2013111312(A1) 申请公布日期 2013.08.01
申请号 WO2012JP51726 申请日期 2012.01.26
申请人 MITSUBISHI ELECTRIC CORPORATION;SATO, TAKEHIKO;HIZA, SHUICHI;SAKAI, MASASHI;MATSUNO, SHIGERU 发明人 SATO, TAKEHIKO;HIZA, SHUICHI;SAKAI, MASASHI;MATSUNO, SHIGERU
分类号 H01L31/04 主分类号 H01L31/04
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