发明名称 Hot electron based metal semiconductor nanodiode Photocatalytic devices
摘要 PURPOSE: Hot electron based metal semiconductor nanodiode photocatalytic devices are provided to control the activity of reaction according to energy gap by controlling hot electrons. CONSTITUTION: A photocatalytic activity layer includes a white gold film layer and a gold thin film layer. The photocatalytic activity layer activates optical catalytic reaction. Organometallic compound includes Pt, Pd, Ni, Co, Fe and Mn. Transition metal complex includes Fe, Co, and Zn and Mn. The photocatalytic activity layer forms a charge transport layer and a Schottky diode.
申请公布号 KR101292080(B1) 申请公布日期 2013.07.31
申请号 KR20110047377 申请日期 2011.05.19
申请人 发明人
分类号 H01L31/07;H01L31/04 主分类号 H01L31/07
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