| 摘要 |
PURPOSE: An N-polar nitride semiconductor device and a manufacturing method thereof are provided to reduce ohmic contact resistance by using n-type GaN of high concentration. CONSTITUTION: A substrate is prepared (S110). An N-polar nitride epitaxial layer is formed on the upper side of the substrate (S120). An etch control layer is formed on the upper side of the N-polar nitride epitaxial layer (S130). An n-type nitride layer is formed on the upper side of the etch control layer (S140). The n-type nitride layer and the etch control layer are removed (S150). A source electrode and a drain electrode are formed in an area without the n-type nitride layer and the etch control layer (S160). The remnant n-type nitride layer is etched except the lower sides of the drain electrode and the source electrode (S170). An ohmic contact is formed on the source electrode and the drain electrode by a thermal process (S180). A gate electrode is formed on the upper side of the etch control layer (S190). [Reference numerals] (AA) Start; (BB) Finish; (S110) Prepare a substrate; (S120) Form an epitaxial layer (GaN/AIyGAI-y buffer layer/transition layer); (S130) Form an etch control layer; (S140) Form an n-type nitride layer; (S150) Etch source/drain regions; (S160) Form source/drain electrodes; (S170) Etch an n-type nitride layer; (S180) Form an ohmic contact through a thermal process; (S190) Form a gate electrode |
