FIELD EFFECT TRANSISTOR TYPE SENSOR

摘要

PURPOSE: A field effect transistor type sensor is provided to obtain the sensitivity of a low frequency domain by maintaining electrical impedance with a low level. CONSTITUTION: A source part (110) and a drain part (120) are formed on a substrate. A channel part (130) is formed between the source part and the drain part. A membrane (200) is separated from the channel part and is located on the upper side of the substrate. An electrostatic charge member (300) is separated from the channel part and is formed on the lower side of the membrane. An electrostatic member generates an electric field.