| 摘要 |
A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber (1), wherein the reaction chamber (1) is heated to a temperature in the region 1600 °C and 2000 °C, wherein process gases enter the reaction chamber (1) by use of at least three gas flows, a primary gas flow (16), a secondary gas flow (17) surrounding the primary gas flow (16), and a shower gas flow (18), wherein the shower gas flow is fed substantially perpendicularly to the primary (16) and the secondary (17) gas flows and being directed towards the substrate, and said primary and secondary flows oriented substantially parallel to the surface of the substrate; a silicon precursor gas is entered by means of the primary gas flow (16), a hydrocarbon precursor gas is entered in either: the primary gas flow (16), the secondary gas flow (17), the shower gas flow (18), or in any combination of said flows, and hydrogen is entered primarily in the secondary flow (17) and the shower head flow (18). A CVD reactor chamber (1) for use in processing the method is also disclosed. |
