HOT PLATE AND SUBSTRATE PROCESSING EQUIPMENT USING THE SAME

摘要

The present invention provides a vapour chamber and substrate processing equipment using the same, wherein the vapour chamber comprises a central sub vapour chamber and at least one outer ring sub vapour chamber located around the central sub vapour chamber; thermal insulation parts are provided between the central sub vapour chamber and the outer ring sub vapour chamber and between two adjacent outer ring sub vapour chambers, so that the heat conduction between the adjacent sub vapour chambers can be effectively prevented or reduced by means of the thermal insulation parts. The vapour chamber and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.