| 摘要 |
<p>49 AbstractSilicon Single Crystal Substrate and Method of Manufacturing the Same5To provide a silicon single crystal substrate having uniform resistance in the substrate, less BMDs in a surface layer of thesubstrate, and moderate BMDs in a center of thickness of the10 substrate.A silicon single crystal substrate is formed by slicing asilicon single crystal grown with a Czochralski method, the substrate having the following characteristics. The resistivity in a center of a first main surface of the silicon single15 crystal substrate is not lower than 50Ω.cm and a rate of change in resistivity in the first main surface is not higher than 3%. The average density of oxygen precipitates bulk micro defects in a region lying between the first main surface and a plane at a depth of 50 µm is lower than 1 x 106 1cm9. The20 average density of oxygen precipitates bulk micro defects in a region lying between a plane at a depth of 300 pm and a plane at a depth of 400 um from the first main surface is not lower than 1 x 108 /cm3 and not higher than 1 x 109 / cm3.25 Fig. 1</p> |
