发明名称 |
NON-PLANAR QUANTUM WELL DEVICE HAVING INTERFACIAL LAYER AND METHOD OF FORMING SAME |
摘要 |
Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), and a quantum well layer. A fin structure is formed in the quantum well structure, and an interfacial layer provided over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure. |
申请公布号 |
EP2619798(A2) |
申请公布日期 |
2013.07.31 |
申请号 |
EP20110827698 |
申请日期 |
2011.09.24 |
申请人 |
INTEL CORPORATION |
发明人 |
RACHMADY, WILLY;PILLARISETTY, RAVI;LE, VAN H.;CHAU, ROBERT |
分类号 |
H01L29/78;H01L21/336;H01L29/165;H01L29/267;H01L29/51;H01L29/775 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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