| 摘要 |
<p>A METHOD OF FABRICATED A WAFER LEVEL PACKAGE (100) IS DESCRIBED. IN ONE EMBODIMENT, THE METHOD INCLUDES FABRICATING AT LEAST ONE ACTIVE DEVICE ON A SEMICONDUCTOR WAFER THAT HAS NOT BEEN SINGULATED, WITH THE ACTIVE DEVICE HAVING A PLURALITY OF BONDING PADS (104) EXPOSED AT AN UPPER SURFACE OF THE WAFER. PRIOR TO SINGULATING THE SEMICONDUCTOR WAFER, A PLURALITY OF CORRESPONDING STUD BUMPS (106) ON THE PLURALITY OF BONDING PADS (104) WITH A WIRE BONDING TOOL ARE FORMED. THEREAFTER, A MOLDING ENCAPSULATION LAYER (108) IS APPLIED OVER THE SEMICONDUCTOR WAFER LEAVING AN UPPER PORTION OF EACH OF THE PLURALITY OF STUD BUMPS (106) EXPOSED.</p> |
