发明名称 FAST EXIT FROM DRAM SELF-REFRESH
摘要 Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller.
申请公布号 EP2619674(A2) 申请公布日期 2013.07.31
申请号 EP20110827701 申请日期 2011.09.24
申请人 INTEL CORPORATION 发明人 BAINS, KULJIT
分类号 G06F12/00;G06F12/02;G06F13/14;G06F13/16;G11C11/401 主分类号 G06F12/00
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