发明名称 INTEGRATED PASSIVES AND POWER AMPLIFIER
摘要 <p>This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting substrate or a glass substrate. The first substrate may be a glass substrate. The first substrate may include conductive vias. A power combiner circuit may be deposited on a first side of the first substrate. The power combiner circuit may include passive devices deposited on at least the first side of the first substrate. The integrated circuit may include a power amplifier circuit disposed on and configured for electrical connection with the power combiner circuit, to form a power amplification system. The conductive vias may include thermal vias configured for conducting heat from the power amplification system and/or interconnect vias configured for electrical connection between the power amplification system and a conductor on a second side of the first substrate.</p>
申请公布号 EP2619791(A1) 申请公布日期 2013.07.31
申请号 EP20110770223 申请日期 2011.09.16
申请人 QUALCOMM MEMS TECHNOLOGIES, INC. 发明人 BLACK, JUSTIN, PHELPS;SHENOY, RAVINDRA, V.;GOUSEV, EVGENI, PETROVICH;HADJICHRISTOS, ARISTOTELE;MYERS, THOMAS, ANDREW;KIM, JONGHAE;VELEZ, MARIO, FRANCISCO;LAN, JE-HSIUNG, JEFFREY;LO, CHI, SHUN
分类号 H01L23/31;G02B26/00;H01L21/56 主分类号 H01L23/31
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