| 摘要 |
<p>In some examples, the technology described herein includes a radio frequency transparent vapor barrier assembly. The barrier assembly includes a substrate having a three-dimensional surface. The barrier assembly further includes at least one barrier stack positioned adjacent to the three-dimensional surface of the substrate. The at least one barrier stack includes at least one first inorganic layer and at least one second inorganic layer. The least one barrier stack substantially prevents vapor penetration to the substrate.</p> |
