发明名称 |
Method and apparatus of patterning semiconductor device |
摘要 |
Provided is an apparatus for fabricating a semiconductor device. The apparatus includes a first photomask and a second photomask. The first photomask has a plurality of first features thereon, and the first photomask having a first global pattern density. The second photomask has a plurality of second features thereon, and the second photomask has a second global pattern density. The plurality of first and second features collectively define a layout image of a layer of the semiconductor device. The first and second global pattern densities have a predetermined ratio.
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申请公布号 |
US8499261(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US201213474865 |
申请日期 |
2012.05.18 |
申请人 |
CHIH MING-HUI;TSAI CHENG-KUN;HUANG WEN-CHUN;LIU RU-GUN;CHEN CHII-PING;YANG JIING-FENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIH MING-HUI;TSAI CHENG-KUN;HUANG WEN-CHUN;LIU RU-GUN;CHEN CHII-PING;YANG JIING-FENG |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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地址 |
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