| 摘要 |
<p>19AbstractMethod for producing an epitaxially coated semiconductor wafer5 The invention relates to a method for producing an epitaxially coated semiconductor wafer, in which a semiconductor wafer polished at least on its front side is provided, is placed on a susceptor in a single-wafer epitaxy reactor and is coated by applying an epitaxial layer on its polished front side by10 chemical vapor deposition at temperatures of 1000 - 1200°C, wherein, after epitaxial coating has taken place, the semiconductor wafer is cooled in the temperature range from 1200°C to 900°C at a race of less than 5°C per second.15 Figure 1</p> |
