| 摘要 |
The invention relates to manufacturing techniques for spontaneous emission sources based on semiconductor compounds of type ABfor a spectral range of 2.6-4.7 microns and to manufacturing techniques for photosensitive structures for a spectral range of 2.0-4.7 microns. According the first embodiment, the heterostructure comprises a substrate comprising InAs, a barrier layer comprising InSbP and disposed on the substrate, an active layer comprising InAsSbP and disposed on the barrier layer. LEDs based on the heterostructure according to the first embodiment emit at a wavelength range of 2.6-3.1 microns. According to the second embodiment, the heterostructure comprises a substrate comprising InAs, an active area comprising InAsSb and disposed on the substrate, a barrier layer comprising InSbP and disposed on the active area. The active area may comprise a bulk active layer InAsSb, quantum wells of InAs/InAsSb strained superlattice or GaInAs/InAsSb. LEDs based on the heterostructure according to the second embodiment emit at a wavelength range of 3.1-4.7 microns, while the photodiodes provide a broadband sensitivity in the range of 2.0-4.7 microns. According to the method for manufacturing the heterostructure, tret-butilarsin is used as a source of arsenic and tret-butylphosphine is used as a source of phosphorus. |
