| 摘要 |
<p>The invention relates to a process for obtaining oxidic semiconductors. According to the invention, the process consists in dissolving Co and Zn nitrates, at a Zn/Co molar ratio = (1-x)/x, where x = 0.04, 0.06, 0.1, in distilled water, the resulting aqueous solution being heated to 40...60°C, polyvinyl pyrrolidone and dextran aqueous solutions being admixed so as to obtain a Zn/Co/PVP/dextran molar ratio = (1-x)/x/0.05/0.05, afterwards the resulting solution being heated to 40...80°C for 10...24 hours to permit gel formation, finally there resulting a homogeneous and stable sol of ZnCoO precursor of which there are formed thin films of oxidic semiconductor with magnetic dilution, Co-doped ZnO, by successive deposition of three precursor layers on the SiO/Si or optical glass carrier, at a rate of 3000...4000 rpm, preheat treatment of films at 90...100°C for 30...60 min and heat treatment at 600...850°C for 30...120 min in an oxygen atmosphere.</p> |
