发明名称 Inverse-mode bipolar transistor radio-frequency switches and methods of using same
摘要 The various embodiments of the present disclosure relate generally to inverse-mode Radio-Frequency ("RF") switching circuits and methods of using the same. An embodiment of the present invention provides an inverse-mode RF switching circuit. The inverse-mode RF switching circuit comprises a bipolar transistor, a shunt element, a first RF channel, and a second RF channel. The bipolar transistor comprises a base, a collector, and an emitter, wherein the base and emitter are in electrical communication first via a base-emitter junction and second via an electrical connection element. The shunt element is in electrical communication with the collector. The first RF channel is in electrical communication with the base and emitter. The second RF channel is in electrical communication with the collector and the shunt element. The base-collector junction operates as a switching diode between the first RF channel and the second RF channel.
申请公布号 US8498576(B2) 申请公布日期 2013.07.30
申请号 US201113082450 申请日期 2011.04.08
申请人 MADAN ANUJ;CRESSLER JOHN D.;GEORGIA TECH RESEARCH CORPORATION 发明人 MADAN ANUJ;CRESSLER JOHN D.
分类号 H04B1/00;H04B1/10;H04B15/00;H04M1/00 主分类号 H04B1/00
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