发明名称 Light emitting device and method of manufacturing the same
摘要 A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.
申请公布号 US8497525(B2) 申请公布日期 2013.07.30
申请号 US20100898775 申请日期 2010.10.06
申请人 YAMAGATA HIROKAZU;YAMAZAKI SHUNPEI;TAKAYAMA TORU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAGATA HIROKAZU;YAMAZAKI SHUNPEI;TAKAYAMA TORU
分类号 G09G3/30;H01L33/54;H01L27/32;H01L33/56 主分类号 G09G3/30
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