发明名称 |
Light emitting device and method of manufacturing the same |
摘要 |
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.
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申请公布号 |
US8497525(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US20100898775 |
申请日期 |
2010.10.06 |
申请人 |
YAMAGATA HIROKAZU;YAMAZAKI SHUNPEI;TAKAYAMA TORU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAGATA HIROKAZU;YAMAZAKI SHUNPEI;TAKAYAMA TORU |
分类号 |
G09G3/30;H01L33/54;H01L27/32;H01L33/56 |
主分类号 |
G09G3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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