发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
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申请公布号 |
US8497553(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US20100905801 |
申请日期 |
2010.10.15 |
申请人 |
YAMAGIWA HIROTO;HASHIZUME SHINGO;IKOSHI AYANORI;YANAGIHARA MANABU;UEMOTO YASUHIRO;PANASONIC CORPORATION |
发明人 |
YAMAGIWA HIROTO;HASHIZUME SHINGO;IKOSHI AYANORI;YANAGIHARA MANABU;UEMOTO YASUHIRO |
分类号 |
H01L23/62;H01L21/338;H01L29/66;H01L31/06;H02H3/00;H02H9/02 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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