发明名称 |
Method to modify the conductivity of graphene |
摘要 |
A gated electrical device includes a non-conductive substrate and a graphene structure disposed on the non-conductive substrate. A metal gate is disposed directly on a portion of the graphene structure. The metal gate includes a first metal that has a high contact resistance with graphene. Two electrical contacts are each placed on the graphene structure so that the metal gate is disposed between the two electrical contacts. In a method of making a gated electrical device, a graphene structure is placed onto a non-conductive substrate. A metal gate is deposited directly on a portion of the graphene structure. Two electrical contacts are deposited on the graphene structure so that the metal gate is disposed between the two electrical contacts.
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申请公布号 |
US8497499(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US20100902360 |
申请日期 |
2010.10.12 |
申请人 |
DAVIDOVIC DRAGOMIR;DE HEER WALTER A.;MALEC CHRISTOPHER E.;GEORGIA TECH RESEARCH CORPORATION |
发明人 |
DAVIDOVIC DRAGOMIR;DE HEER WALTER A.;MALEC CHRISTOPHER E. |
分类号 |
H01L51/00 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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