发明名称 |
Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
摘要 |
A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
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申请公布号 |
US8496843(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US20100724990 |
申请日期 |
2010.03.16 |
申请人 |
GUO YI;LIU ZHENDONG;REDDY KANCHARLA-ARUN KUMAR;ZHANG GUANGYUN;ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
GUO YI;LIU ZHENDONG;REDDY KANCHARLA-ARUN KUMAR;ZHANG GUANGYUN |
分类号 |
C03C15/00;C03C25/68;H01L21/302;H01L21/461 |
主分类号 |
C03C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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