发明名称 Semiconductor memory device and method of operating the same
摘要 A semiconductor memory device includes memory blocks each including a plurality of groups of memory cells programmable in multiple levels and a control circuit configured to make a determination of whether a specific memory block treated a bad block, from among the memory blocks, is programmable in a single level and to control the specific memory block according to a result of the determination so that the specific memory block is usable as a single level cell block.
申请公布号 US8498153(B2) 申请公布日期 2013.07.30
申请号 US201113151678 申请日期 2011.06.02
申请人 SEONG JIN YONG;HYNIX SEMICONDUCTOR INC. 发明人 SEONG JIN YONG
分类号 G11C11/34;G11C16/04;G11C16/06 主分类号 G11C11/34
代理机构 代理人
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