发明名称 |
Semiconductor memory device and method of operating the same |
摘要 |
A semiconductor memory device includes memory blocks each including a plurality of groups of memory cells programmable in multiple levels and a control circuit configured to make a determination of whether a specific memory block treated a bad block, from among the memory blocks, is programmable in a single level and to control the specific memory block according to a result of the determination so that the specific memory block is usable as a single level cell block.
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申请公布号 |
US8498153(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US201113151678 |
申请日期 |
2011.06.02 |
申请人 |
SEONG JIN YONG;HYNIX SEMICONDUCTOR INC. |
发明人 |
SEONG JIN YONG |
分类号 |
G11C11/34;G11C16/04;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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