发明名称 Ion etching of growing InP nanocrystals using microwave
摘要 High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
申请公布号 US8496844(B1) 申请公布日期 2013.07.30
申请号 US201213645876 申请日期 2012.10.05
申请人 THE FLORIDA STATE UNIVERSITY RESEARCH FOUNDATION,INC. 发明人 STROUSE GEOFFREY F.;LOVINGOOD DEREK D.
分类号 B44C1/22 主分类号 B44C1/22
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