发明名称 |
Structure and method to enhance both NFET and PFET performance using different kinds of stressed layers |
摘要 |
In producing complementary sets of metal-oxide-semiconductor (CMOS) field effect transistors, including nMOS and pMOS transistors), carrier mobility is enhanced or otherwise regulated through the use of layering various stressed films over either the nMOS or pMOS transistor (or both), depending on the properties of the layer and isolating stressed layers from each other and other structures with an additional layer in a selected location. Thus both types of transistors on a single chip or substrate can achieve an enhanced carrier mobility, thereby improving the performance of CMOS devices and integrated circuits.
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申请公布号 |
US8497168(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US201113071940 |
申请日期 |
2011.03.25 |
申请人 |
DORIS BRUCE B.;YANG HAINING;ZHU HUILONG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;YANG HAINING;ZHU HUILONG |
分类号 |
H01L21/335;H01L21/8232;H01L21/8238 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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