发明名称 |
Method of fabricating multi-fingered semiconductor devices on a common substrate |
摘要 |
A method of fabricating p-type metal oxide semiconductor (PMOS) transistor devices on a common substrate is presented. The method provides a first portion of semiconductor material and a second portion of semiconductor material on the common substrate. The first portion of semiconductor material and the second portion of semiconductor material are insulated from each other. The method continues by creating first PMOS transistor devices using the first portion of semiconductor material. The first PMOS transistor devices include stressor regions that impart compressive stress to channel regions of the first PMOS transistor devices. The method also creates second PMOS transistor devices using the second portion of semiconductor material. The second PMOS transistor devices do not include channel stressor regions.
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申请公布号 |
US8497179(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US20100684697 |
申请日期 |
2010.01.08 |
申请人 |
SULTAN AKIF;GLOBALFOUNDRIES, INC. |
发明人 |
SULTAN AKIF |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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