发明名称 Thin-film capacitor with internally hollow through holes
摘要 A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 mum2 to 7.0 mum2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.
申请公布号 US8498095(B2) 申请公布日期 2013.07.30
申请号 US20100956060 申请日期 2010.11.30
申请人 YANO YOSHIHIKO;OIKAWA YASUNOBU;HORINO KENJI;SAITA HITOSHI;TDK CORPORATION 发明人 YANO YOSHIHIKO;OIKAWA YASUNOBU;HORINO KENJI;SAITA HITOSHI
分类号 H01G4/005;H01G4/012;H01G4/20;H01G4/33 主分类号 H01G4/005
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