| 摘要 |
PURPOSE: A non-volatile memory device and a memory system including thereof are provided to set the threshold voltage of a ground selection transistor and a string selection transistor differently, thereby managing the ground selection transistor and the string selection transistor as one selection line. CONSTITUTION: A first NAND string (NS11) comprises a first string selection transistor (SST), a first ground selection transistor (GST) which has the threshold voltage higher than the first string selection transistor, and a first memory cell which is laminated in the vertical direction from a substrate. A first selection line (SSL1) connects a first string selection transistor and a first ground selection transistor. A second selection line connects a second string selection transistor and a second ground selection transistor. A selection line driver (123) comprises a plurality of pass transistor (PT1~PT4). |
