SELECTIVE ETCHING METHOD OF GAAS/ALGAAS HETEROJUNCTION STRUCTURE USING PLASMA

摘要

PURPOSE: A method for selectively etching a GaAs/AlGaAs heterojunction structure by using plasma is provided to generate the plasma without a matching network by using a pulse DC as a power source of the plasma. CONSTITUTION: A pulse DC is used as a power source generating plasma. A mixture of gases selected from a group of BCl3, SF6, CF4, and CHF3 is used as an etching gas. The voltage of the pulse DC is 100 to 600 V. The pulse frequency of the pulse DC is 100 to 200 kHz. The reverse time of the pulse DC is 0.7 to 1.2 us.