NON SELECTIVE ETCHING METHOD OF GAAS/ALGAAS HETEROJUNCTION STRUCTURE USING PLASMA

摘要

PURPOSE: A nonselective etching method of a GaAs/AlGaAs heterojunction structure is provided to secure a wide etching process area by mixing inert gases used as etching gas. CONSTITUTION: A pulse DC is used as a power source generating plasma. BCl3 is used as an etching gas. The voltage of the pulse DC is 100 to 600 V. The pulse frequency of the pulse DC is 100 to 150 kHz. The reverse time of the pulse DC is 0.8 to 1.2 us. [Reference numerals] (AA) AlGaAs/GaAs nonselection etching conception figure; (BB) Before etching; (CC) After etching