ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT

摘要

PURPOSE: An electrostatic discharge protection circuit is provided to improve long-term reliability of an integrated circuit by operating not to directly apply high voltage to a middle gate oxide film transistor. CONSTITUTION: Two stack transistors (MVN5,MVN6) are connected to a first power line (L1) and a ground line in series. A first resistor (Res1) is connected between the first power line and a first node. A first transistor (MVN1) and a capacitor (EGC1) are connected between the first node and the ground line in series. A second transistor (MVP1) is connected between a second power line and a second node, and a gate thereof is connected to the ground line. An inverter (MVP3,MVN2) is connected to a third node and the ground line and an input thereof is connected to the second node. A fourth transistor is connected to the first power line, and a gate thereof is connected to the second node.