发明名称 Semiconductor Lighting Device with a High Efficiency
摘要 PURPOSE: A high efficiency semiconductor light emitting device and a photonic bio sensor are provide to improve luminous efficiency by forming a transparent doping layer with multilayer structure on the upper side of a light emitting layer. CONSTITUTION: A semiconductor light emitting device includes a bottom electrode, a light emitting layer, and a top electrode. The light emitting layer includes a silicon nano crystal. A doping layer(200) with multilayer structure is formed on the upper side of the light emitting layer by alternatively growing thin films with different band gaps A hole injection layer is formed between the bottom electrode and the light emitting layer. A transparent conductive electrode(130) is formed on an electron injection layer(120).
申请公布号 KR101290150(B1) 申请公布日期 2013.07.26
申请号 KR20090111652 申请日期 2009.11.18
申请人 发明人
分类号 H01L33/08 主分类号 H01L33/08
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