METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to improve the electrical reliability of the semiconductor device by efficiently removing metal particles and abrasion byproducts. CONSTITUTION: A first film including a first metal is formed (S2000). A second film including a second metal is formed around the first film (S2100). The upper surfaces of the first and the second film are polished (S2200). The first and the second film are washed by using a washing solution (S2400). The washing solution includes an etching solution etching the first and the second film and an inhibitor inhibiting the etching of the second film. [Reference numerals] (AA) Start; (BB) End; (S2000) Form a first film; (S2100) Form a second film around the first film; (S2200) Polish the first and the second film; (S2300,S2500) Physically wash the first and the second film; (S2400) Wash the first and the second film with a washing solution