| 摘要 |
<p>The invention relates to a method for testing a semiconductor substrate (1) for radiofrequency applications, characterized in that the electrical resistivity profile of said substrate as a function of depth, is measured and, using said profile, a criterion is calculated, defined by the formula (I): where D is the integration depth, sigma(x) is the electrical conductivity measured at a depth x in the substrate, and L is a characteristic attenuation length of the electric field in the substrate. The invention also relates to a method for selecting a semiconductor substrate (1) for radiofrequency applications and to a device for implementing said methods.</p> |
