| 摘要 |
PROBLEM TO BE SOLVED: To provide a split exposure technology capable of suppressing deterioration in performance of a solid-state imaging element.SOLUTION: A photoresist 100 is formed on a semiconductor substrate, and the photoresist 100 is subjected to split exposure. At this time, a borderline DL of the split exposure is at least located on a region PAR where an active region in which a pixel part is formed is sectioned, on the semiconductor substrate. Next, the exposed photoresist 100 is developed to pattern the photoresist 100. Thereafter, the photoresist 100 after patterning is utilized to form to the semiconductor substrate an element isolation structure for sectioning the active region to the semiconductor substrate. |
