发明名称 |
POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS |
摘要 |
The present invention provides a polymerizable tertiary ester compound represented by the following general formula (1a) or (1b). There is provided a polymerizable ester compound useful as a monomer for a base resin of a resist composition having a high resolution and a reduced pattern edge roughness in photolithography using a high-energy beam such as an ArF excimer laser light as a light source, especially in immersion lithography, a polymer containing a polymer of the ester compound, a resist composition containing the polymer as a base resin, and a patterning process using the resist composition.
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申请公布号 |
US2013189620(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201313743019 |
申请日期 |
2013.01.16 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
SUKA YUKI;HATAKEYAMA JUN;HASEGAWA KOJI |
分类号 |
G03F7/039;C07C69/653;C08F220/26 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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