<p>The thin film transistor of the present invention comprises: a gate electrode (22) formed on a substrate (21); a gate insulating film (23) that is formed so as to cover the gate electrode (22); an oxide semiconductor layer (24) that is formed on the gate insulating film (23); an etching stopper film (25) that is formed on the channel-forming portion of the oxide semiconductor layer (24); and a source electrode (26s) and a drain electrode (26d) formed so as to cover the end parts of the oxide semiconductor layer (24) and the etching stopper film (25). The etching stopper film (25) is configured from an insulating film material capable of attenuating light having a wavelength of 450 nm or less.</p>
