发明名称 |
WIRE DISCHARGE MACHINING DEVICE, WIRE DISCHARGE MACHINING METHOD, THIN-PLATE MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER MANUFACTURING METHOD |
摘要 |
<p>The purpose of the present invention is to prevent, in end-surface machining, a break of the wire electrode or decrease in the machining surface accuracy caused by inflow of a machining current from a cutting wire part at which discharge is not occurring. This wire discharge machining device is provided with a control means for selecting a cutting wire subjected to application of a pulse voltage by a pulse voltage generation means on the basis of: the angle between the end surface of the machining subject and a surface that is not parallel to the end surface and that includes a plurality of cutting wires; the parallel spacing between the cutting wires; and the relative distances between the cutting wires and the machining subject. A driving means is configured so as to drive the machining subject in a direction that is not perpendicular to the surface including the cutting wires and to cut the machining subject by discharge machining through application of a pulse voltage.</p> |
申请公布号 |
WO2013108530(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
WO2012JP82696 |
申请日期 |
2012.12.17 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION;ITOKAZU, ATSUSHI;MIYAKE, HIDETAKA |
发明人 |
ITOKAZU, ATSUSHI;MIYAKE, HIDETAKA |
分类号 |
B23H7/02 |
主分类号 |
B23H7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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