发明名称 WIRE DISCHARGE MACHINING DEVICE, WIRE DISCHARGE MACHINING METHOD, THIN-PLATE MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
摘要 <p>The purpose of the present invention is to prevent, in end-surface machining, a break of the wire electrode or decrease in the machining surface accuracy caused by inflow of a machining current from a cutting wire part at which discharge is not occurring. This wire discharge machining device is provided with a control means for selecting a cutting wire subjected to application of a pulse voltage by a pulse voltage generation means on the basis of: the angle between the end surface of the machining subject and a surface that is not parallel to the end surface and that includes a plurality of cutting wires; the parallel spacing between the cutting wires; and the relative distances between the cutting wires and the machining subject. A driving means is configured so as to drive the machining subject in a direction that is not perpendicular to the surface including the cutting wires and to cut the machining subject by discharge machining through application of a pulse voltage.</p>
申请公布号 WO2013108530(A1) 申请公布日期 2013.07.25
申请号 WO2012JP82696 申请日期 2012.12.17
申请人 MITSUBISHI ELECTRIC CORPORATION;ITOKAZU, ATSUSHI;MIYAKE, HIDETAKA 发明人 ITOKAZU, ATSUSHI;MIYAKE, HIDETAKA
分类号 B23H7/02 主分类号 B23H7/02
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