| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide thin film having a good quality by controlling a direction of crystal arrangement of the oxide thin film.SOLUTION: A method of manufacturing a lamination structure consisting of an oxide layer and an insulating layer, includes the following steps of: (1) providing the insulating layer; (2) depositing an oxide thin film on the insulating layer so that Rrms (root-mean-square-roughness) at 20×20 μmis in a range of 1.0-5.3 Å; and (3) performing heat treatment of the thin film at 150-500°C to obtain the oxide layer. In the case where a substrate is transported sequentially to positions opposed to three or more targets juxtaposed at a predetermined interval in a vacuum chamber, and a negative potential and a positive potential are alternately applied from an AC power supply to each of the targets, the step (2) is performed using a sputtering method by generating plasma on the target while switching a target to which the potential should be applied between two or more branched and connected targets, with respect to at least one output from the AC power supply. |
