| 发明名称 |
MAGNETORESISTIVE RANDOM ACCESS MEMORY |
| 摘要 |
A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed above or below the MTJ. The induction line is configured to induce a magnetic field at the MTJ.
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| 申请公布号 |
US2013188418(A1) |
申请公布日期 |
2013.07.25 |
| 申请号 |
US201213356920 |
申请日期 |
2012.01.24 |
| 申请人 |
CHIANG TIEN-WEI;LIN KAI-CHUN;KAO YA-CHEN;YU HUNG-CHANG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHIANG TIEN-WEI;LIN KAI-CHUN;KAO YA-CHEN;YU HUNG-CHANG |
| 分类号 |
G11C11/16;H01L29/82 |
主分类号 |
G11C11/16 |
| 代理机构 |
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